The HVVFET™ is an extremely rugged and reliable transistor. It is a silicon MOSFET structure that is processed using conventional wafer processing equipment. Our goal is to exceed our customers’ reliability requirements and surpass their expectations.

The manufacturing team of HVVi has decades of experience in building commercial semiconductor products. From the start, the HVVFET™ was designed to be manufacturable and set new standards for RF power transistor reliability and ruggedness. Throughout the development phase we have identified and designed out all potential failure mechanisms. For example, HVVi has employed accelerated stress testing throughout the HVVFET™ development to identify failure mechanisms and to ensure that individual processes and components will pass standard reliability testing. HVVi is continuously evaluating all aspects of transistor reliability.

HVVi is in the process of performing all industry standard reliability testing applicable to our product following JEDEC, AEC, and MIL standards. The HVVi Reliability Process flow illustrates our ongoing reliability test procedure.  The stress tests in the Reliability Process Flow show the qualification tests for the HVVi portfolio of HVVFET™ products.  Move your cursor over any block in the reliability process flow to view further information on the testing procedure.