Richardson Electronics to Distribute HVVi’s Silicon Power Transistors

Agreement includes new products based on innovative HVVFET™ architecture

June 11, 2008 – La Fox, Illinois…Richardson Electronics, Ltd. (NASDAQ: RELL) announced today it has signed a global distribution agreement with HVVi Semiconductors, Inc., of Phoenix, AZ, to distribute its RF power transistors, based on HVVi’s innovative, new HVVFET™ architecture.

HVVi recently announced the first major advance in silicon RF power transistor design in more than 15 years. Based on the world’s first High Voltage Vertical Field Effect Transistor (HVVFET™), this new architecture delivers frequency bandwidth, voltage and power levels to radar and avionic applications with improved performance—reducing overall part count and enhancing cost efficiencies.

“We pride ourselves on working with the industry’s leading-edge suppliers to bring pioneering technology to the market. With HVVi's innovative geometries, they fill a void in the avionics transponder and ground-based radar markets. Gain, efficiency, and load-pull survivability are just a few of their attributes,” said Chris Marshall, Vice President of Richardson Electronics’ Wireless and Broadband Communications Group. “HVVi’s agile design assistance is expedient and thorough. We welcome this opportunity to help our customers find alternative design solutions.”

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