HVVi Semiconductors Expands HVVFET
 RF Power Transistor Portfolio

New Devices Bring Dramatic System-level Benefits to Avionics, Radar Designers

Phoenix, AZ – June 12, 2008 – HVVi Semiconductors, Inc., a developer of silicon RF power transistors, announced today two new additions to its growing line of products based on the industry’s first High Voltage Vertical Field Effect Transistor (HVVFET™) architecture. Using this innovative technology and its inherent ability to deliver higher output power and gain than competitive technologies in a smaller package, HVVi has introduced the HVV1011-035, a 35W surface mount RF power transistor for IFF, TCAS and Mode-S applications, and the HVV1214-200, a 200W RF power transistor for ground-based radar applications. Like their predecessors, the new devices are designed to operate at 48V.  

“Our initial products introduced our revolutionary HVVFET architecture to the industry and demonstrated the significant advantages it offers over existing LDMOS and Bipolar technologies in terms of output, gain, power consumption and ruggedness,” said Daniel Ong, Product Manager at HVVi. “But the true benefits of the HVVFET architecture are realized at the systems level. By adding a 35W driver to our existing 300W power transistor in the 1030-1090 MHz band, and a 200W device to our existing 25W and 75W drivers in the 1.2 – 1.4 GHz band, designers of IFF and ground-based radar systems can now take advantage of this technology’s dramatic benefits to deliver higher output, lower power consumption, and better ruggedness at lower cost. “

Multiple system advantages
From a system’s perspective, the HVVFET technology offers performance advantages in terms of gain, efficiency and impedance that allow designers to eliminate amplification stages in Power Amplifiers (PAs), reduce parts count, and shrink PCB space requirements.  At the same time, the technology’s higher rated ruggedness allows radar and avionics designers to eliminate bulky and costly isolators and, in the process, significantly reduce system weight, size and cost.

Complete system lineups
The two new power transistors announced today allow designers to build high power, high impedance systems in easy-to-match 48V components. For avionics applications in the L-band from 1030 MHz to 1090 MHz, the HVV1011-035 power transistor operates at 48V and delivers 35W of pulsed output power. The new device offers 20 dB of gain and 52% efficiency typical at 25 ºC with a pulse width of 50 µS and a pulse width period of 5%. The HVV1011-035 is specified to withstand a 20:1 VSWR over all phase angles, rated output power and operating voltage across the entire frequency band. In a typical implementation, designers can use the HVV1011-035 to drive in parallel two HVV1011-300 transistors introduced in April for IFF applications.

The 200W HVV1214-200 extends the capabilities of HVVi’s growing portfolio of power transistors for L-band pulsed radar applications in the 1.2 GHz to 1.4 GHz band. This new device offers 17 dB of gain and power efficiency of 45% when operating at 25°C with a pulse width of 200 us and a pulse duty cycle of 10%. The HVV1214-200 also offers excellent ruggedness with a VSWR of 20:1. The HVV1214-200 complements a 25W and a 75W driver for the 1.2 GHz to 1.4 GHz band announced in April.

Price and Availability
The HVV1011-035 is sampling now and comes in a compact SM200 style surface mount package with a ceramic lid. The package is MIL-STD-883, Method 1014 qualified. The HVV1011-035 sells for $162.83 in 1-24 unit-quantities.

Samples of the HVV1214-200 are also available immediately. The device comes in a small two-lead, metal flanged HV400 style package with a liquid crystal polymer lid. It also meets MIL-STD-883, Method 1014 requirements. It sells for $343.96 in 1-24 unit-quantities. 

Production volumes will be available in 4Q 2008. Orders may be placed with Richardson Electronics www.rfwireless.rell.com, or (1-800-737-6937) or for a complete listing of Richardson Electronics’ local offices see www.rell.com/locations.asp contact HVVi at sales@hvvi.com.

About HVVi Semiconductors
HVVi Semiconductors Inc. is a developer and supplier of silicon power transistors for radar, avionics, broadcast and wireless infrastructure applications. The company develops new power solutions based on its innovative new High Voltage Vertical Field Transistor (HVVFET) architecture. Using this proprietary, silicon-based device architecture, HVVi Semiconductors Inc. is developing a new generation of power transistors that offer dramatic improvements in power output, frequency performance, and power efficiency. This new technology will allow OEMs in the radar, avionics, broadcast and wireless infrastructure markets to improve system performance and reliability while reducing system and operating costs.  HVVi Semiconductors, Inc. is headquartered in Phoenix, Arizona. The company’s investors include Mobius, Advanced Technology Ventures, Horizon Ventures and ON Semiconductor.  For more information, please visit the company website: www.hvvi.com.

For More Information