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The innovative Transistor Company™
First Generation HVVFET™
17dB gain = half the components of bipolar systems
20:1 ruggedness VSWR mismatch tolerance = more reliable designs
Class AB bias = more linear mode of operation
EDN's Hot 100 Electronic Products of 2008 Winner
Electronic Design Best Military Transistor 2008 Winner
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Delivering a new generation of extremely rugged UHF, L-Band, and S-Band 50V RF power transistors for pulse applications including radar, IFF and TCAS, and general avionics.
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© HVVi Semiconductors, Inc. - All Rights Reserved
10235 South 51st Street - Suite 100, Phoenix, AZ 85044
(866) 429-HVVI or (480) 776-3800